NXP’s MRF1K50H is a 1,500W LDMOS transistor, following on from the 1,250W MRFE6VP61K25H.
This high ruggedness device, MRF1K50H, is designed for use in high VSWR industrial, scientific and medical applications, as well as radio and VHF TV broadcast, sub-GHz aerospace and mobile radio applications. Its unmatched input and output design allows for wide frequency range use from 1.8 to 500 MHz.
Features
- High Drain-source Avalanche Energy Absorption Capability
- Unmatched Input and Output Allowing Wide Frequency Range Utilization
- Device Can Be Used Single-Ended or in a Push-Pull Configuration
- Characterized from 30 to 50 V for Ease of Use
- Suitable for Linear Application
- Integrated ESD Protection with Greater Negative Gate-Source Voltage Range for Improved Class C Operation
- RoHS Compliant
- Recommended Driver: MRFE6VS25N (25 W)
- Lower Thermal Resistance Part Available:MRF1K50N
- This product is included in our product longevity program with assured supply for a minimum of 15 years after launch.
Typical Applications
- Industrial, Scientific, Medical (ISM)
- Laser generation
- Plasma etching
- Particle accelerators
- MRI and other medical applications
- Industrial heating, welding and drying systems
- Broadcast
- Radio broadcast
- VHF TV broadcast
- Aerospace
- VHF omnidirectional range (VOR)
- HF and VHF communications
- Weather radar
- Mobile Radio
- VHF and UHF base stations
Key Parametrics
Product Specifications
| Frequency Min (Min) (MHz) | 1.8 |
| Frequency Max (Max) (MHz) | 500 |
| Supply Voltage (Typ) (V) | 50 |
| P1dB (Typ) (dBm) | 61.8 |
| P1dB (Typ) (W) | 1500 |
| Output Power (Typ) (W) @ Intermodulation Level at Test Signal | 1500 @ Peak |
| Test Signal | Pulse |
| Power Gain (Typ) (dB) @ f (MHz) | 23.7 @ 230 |
| Efficiency (Typ) (%) | 74 |
| Thermal Resistance (Spec)(°C/W) | 0.12 |
| Matching | Unmatched |
| Class | AB |
| Die Technology | LDMOS |
RF Performance Tables
Typical Performance
VDD = 50 Vdc
| Frequency (MHz) |
Signal Type | Pout (W) |
Gps (dB) |
ηD (%) |
| 27 | CW | 1550 CW | 25.9 | 78.3 |
| 81.36(1) | CW | 1400 CW | 23.0 | 75.0 |
| 87.5-108(2,3) | CW | 1475 CW | 23.3 | 83.4 |
| 230(4) | Pulse (100 µsec, 20% Duty Cycle) |
1500 Peak | 23.7 | 74.0 |
Load Mismatch/Ruggedness
| Frequency (MHz) |
Signal Type | VSWR | Pin (W) |
Test Voltage |
Result |
| 230(3) | Pulse (100 µsec, 20% Duty Cycle) |
> 65:1 at all Phase Angles | 13 Peak (3 dB Overdrive) |
50 | No Device Degradation |
1. Data from 81.36 MHz narrowband reference circuit.
2. Data from 87.5-108 MHz broadband reference circuit.
3. The values shown are the center band performance numbers across the indicated frequency range.
4. Data from 230 MHz narrowband production test fixture.
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