RF transistor handles 1.5kW 1.8 to 500 MHz

NXP’s MRF1K50H is a 1,500W LDMOS transistor, following on from the 1,250W MRFE6VP61K25H.

This high ruggedness device, MRF1K50H, is designed for use in high VSWR industrial, scientific and medical applications, as well as radio and VHF TV broadcast, sub-GHz aerospace and mobile radio applications. Its unmatched input and output design allows for wide frequency range use from 1.8 to 500 MHz.

Features

High Drain-source Avalanche Energy Absorption Capability
Unmatched Input and Output Allowing Wide Frequency Range Utilization
Device Can Be Used Single-Ended or in a Push-Pull Configuration
Characterized from 30 to 50 V for Ease of Use
Suitable for Linear Application
Integrated ESD Protection with Greater Negative Gate-Source Voltage Range for Improved Class C Operation
RoHS Compliant
Recommended Driver: MRFE6VS25N (25 W)
Lower Thermal Resistance Part Available:MRF1K50N
This product is included in our product longevity program with assured supply for a minimum of 15 years after launch.

Typical Applications

Industrial, Scientific, Medical (ISM)
- Laser generation
- Plasma etching
- Particle accelerators
- MRI and other medical applications
- Industrial heating, welding and drying systems
Broadcast
- Radio broadcast
- VHF TV broadcast
Aerospace
- VHF omnidirectional range (VOR)
- HF and VHF communications
- Weather radar
Mobile Radio
- VHF and UHF base stations

Key Parametrics

Product Specifications

Frequency Min (Min) (MHz)	1.8
Frequency Max (Max) (MHz)	500
Supply Voltage (Typ) (V)	50
P1dB (Typ) (dBm)	61.8
P1dB (Typ) (W)	1500
Output Power (Typ) (W) @ Intermodulation Level at Test Signal	1500 @ Peak
Test Signal	Pulse
Power Gain (Typ) (dB) @ f (MHz)	23.7 @ 230
Efficiency (Typ) (%)	74
Thermal Resistance (Spec)(°C/W)	0.12
Matching	Unmatched
Class	AB
Die Technology	LDMOS

RF Performance Tables

Typical Performance

V_DD = 50 Vdc

Frequency (MHz)	Signal Type	Pout (W)	G_ps (dB)	η_D (%)
27	CW	1550 CW	25.9	78.3
81.36⁽¹⁾	CW	1400 CW	23.0	75.0
87.5-108^(2,3)	CW	1475 CW	23.3	83.4
230⁽⁴⁾	Pulse (100 µsec, 20% Duty Cycle)	1500 Peak	23.7	74.0

Load Mismatch/Ruggedness

Frequency (MHz)	Signal Type	VSWR	Pin (W)	Test Voltage	Result
230⁽³⁾	Pulse (100 µsec, 20% Duty Cycle)	> 65:1 at all Phase Angles	13 Peak (3 dB Overdrive)	50	No Device Degradation

1. Data from 81.36 MHz narrowband reference circuit.
2. Data from 87.5-108 MHz broadband reference circuit.
3. The values shown are the center band performance numbers across the indicated frequency range.
4. Data from 230 MHz narrowband production test fixture.