Automatic Semiconductor Analyser

Connect any way round to automatically identify and measure a wide range of semiconductor devices. The DCA55 will automatically identify the type of the part, pinout and many component parameters. Components supported include bipolar NPN/PNP transistors, darlingtons, diode-protected transistors, transistors with built-in resistors, enhancement mode MOSFETs, depletion mode MOSFETs, diodes, diode networks, LEDs, 2 and 3 lead bicolour LEDs, JFETs and many more. Further measurements are displayed including transistor gain, leakage current, pn voltage drops, LED voltages, MOSFET threshold voltages and much more. Even if you don’t know anything about the part, just connect it in any configuration and the DCA55 will identify the type of part for you and also identify all the leads. Supplied with universal gold plated hook probes, battery and illustrated user guide. Not designed for in-circuit testing.

Key Features:

Automatic pinout detection and identification, connect any way round.
Automatic part type identification.
Supports semiconductors including transistors, MOSFETs, diodes, LEDs, JFETs and much more.
Detection of special component features such as transistors with diodes or transistors with built-in resistors.
Transistor gain measurement.
Transistor leakage measurement.
MOSFET gate threshold measurement.
Semiconductor voltage drop measurement.
Supplied with gold plated red/green/blue universal hook probes on 160mm flexible leads.

Parameters	Minimum	Typical	Maximum	Notes
Peak test current into S/C	-5.5mA		5.5mA	1
Peak test voltage across O/C	-5.1V		5.1V	1
Measurable transistor gain range (H_FE)	4		65,000	2
Transistor gain accuracy (for H_FE<1000)	-3%-5 H_FE		+3%+5 H_FE	2,9
Transistor V_CEO	2.0V		3.0V	2
Transistor V_BE accuracy	-2%-20mV		+2%+20mV	9
V_BE threshold for Darlington identification		0.9V		3
V_BE threshold for Darlington identification (shunted)		0.8V		4
Acceptable transistor V_BE			1.8V
Base-emitter shunt resistance threshold		60k
Transistor collector-emitter test current	2.45mA	2.50mA	2.55mA
Acceptable transistor collector leakage		1.25mA		6
MOSFET gate threshold range	0.1V		5.0V	5
MOSFET gate threshold accuracy	-2%-20mV		+2%-20mV	5
MOSFET drain-source test current	2.45mA	2.50mA	2.55mA
MOSFET minimum acceptable gate resistance		8k
Thyristor/Triac gate test current		4.5mA		7
Thyristor/Triac load test current		5mA
Diode test current			5mA
Diode forward voltage accuracy	-2%-2mV		+2%+2mV
V_F threshold for LED		1.50V
Short circuit detection threshold		10 ohms
Battery type	23A or MN21 (12V Alkaline)
Battery voltage range	7.50V	12V
Battery voltage warning threshold		8.25V
Inactivity power-down period		30 secs
Dimensions (excluding test leads)	103 x 70 x 20 mm
	4.1″ x 2.8″ x 0.8″
Operating temperature range	0°C		50°C	8
	32°F		122°F

Between any pair of test clips.
Collector current of 2.50mA.
Resistance across reverse biased base-emitter > 60k.
Resistance across reverse biased base-emitter < 60k.
Drain-source current of 2.50mA.
Collector-Emitter voltage of 5V.
Thyristor quadrant 1, Triac quadrants I and III.
Subject to acceptable LCD visibility.
BJT with no shunt resistors.

Price:

£42.50

Es’hail-2 geostationary amateur radio transponders talk

November 05, 2018 in: VHF No comments

Es’hail-2 Graham Shirville (G3VZV) & Dave Crump (G8GKQ) update us on Es’hail-2 and its amateur radio payload at the AMSAT-UK International Space Colloquium in Milton Keynes, October 14th 2018 Es’hail-2 Frequency Bands Narrowband (... Read more