NXP’s MRF1K50H is a 1,500W LDMOS transistor, following on from the 1,250W MRFE6VP61K25H.
This high ruggedness device, MRF1K50H, is designed for use in high VSWR industrial, scientific and medical applications, as well as radio and VHF TV broadcast, sub-GHz aerospace and mobile radio applications. Its unmatched input and output design allows for wide frequency range use from 1.8 to 500 MHz.
High Drain-source Avalanche Energy Absorption Capability
Unmatched Input and Output Allowing Wide Frequency Range Utilization
Device Can Be Used Single-Ended or in a Push-Pull Configuration
Characterized from 30 to 50 V for Ease of Use
Suitable for Linear Application
Integrated ESD Protection with Greater Negative Gate-Source Voltage Range for Improved Class C Operation
Recommended Driver: MRFE6VS25N (25 W)
Lower Thermal Resistance Part Available: MRF1K50N
This product is included in our product longevity program with assured supply for a minimum of 15 years after launch.
Industrial, Scientific, Medical (ISM)
MRI and other medical applications
Industrial heating, welding and drying systems
VHF TV broadcast
VHF omnidirectional range (VOR)
HF and VHF communications
VHF and UHF base stations
Frequency Min (Min) (MHz)
Frequency Max (Max) (MHz)
Supply Voltage (Typ) (V)
P1dB (Typ) (dBm)
P1dB (Typ) (W)
Output Power (Typ) (W) @ Intermodulation Level at Test Signal
1500 @ Peak
Power Gain (Typ) (dB) @ f (MHz)
23.7 @ 230
Efficiency (Typ) (%)
Thermal Resistance (Spec)(°C/W)
RF Performance Tables
V DD = 50 Vdc
(100 µsec, 20% Duty Cycle)
(100 µsec, 20% Duty Cycle)
> 65:1 at all Phase Angles
(3 dB Overdrive)
No Device Degradation
1. Data from 81.36 MHz narrowband reference circuit.
2. Data from 87.5-108 MHz broadband reference circuit.
3. The values shown are the center band performance numbers across the indicated frequency range.
4. Data from 230 MHz narrowband production test fixture.
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