NXP’s MRF1K50H is a 1,500W LDMOS transistor, following on from the 1,250W MRFE6VP61K25H.
This high ruggedness device, MRF1K50H, is designed for use in high VSWR industrial, scientific and medical applications, as well as radio and VHF TV broadcast, sub-GHz aerospace and mobile radio applications. Its unmatched input and output design allows for wide frequency range use from 1.8 to 500 MHz.
RF Performance Tables
VDD = 50 Vdc
(100 µsec, 20% Duty Cycle)
(100 µsec, 20% Duty Cycle)
|> 65:1 at all Phase Angles||13 Peak
(3 dB Overdrive)
|50||No Device Degradation|
1. Data from 81.36 MHz narrowband reference circuit.
2. Data from 87.5-108 MHz broadband reference circuit.
3. The values shown are the center band performance numbers across the indicated frequency range.
4. Data from 230 MHz narrowband production test fixture.
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